 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BAS16HT1G BAS16HT1G Connection Diagram 2 2 A1 SOD-323 1 1 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM IF(AV) IFSM TSTG TJ TA = 25C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Storage Temperature Range Operating Junction Temperature Value 85 200 600 -65 to +150 -55 to +150 Units V mA mA C C * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA Parameter Power Dissipation Thermal Resistance, Junction to Ambient Value 200 600 Units mW C/W Electrical Characteristics Symbol VR VF TA=25C unless otherwise noted Parameter Breakdown Voltage Forward Voltage Test Conditions IR = 5.0A IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA VR = 75V VR = 25V, TA = 150C VR = 75V, TA = 150C VR = 0, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA, RL = 100 Min. 85 Max. 715 855 1.0 1.25 1.0 30 50 2.0 6.0 Units V mV mV V V A A A pF ns IR Reverse Leakage CT trr Total Capacitance Reverse Recovery Time (c)2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A BAS16HT1G Typical Characteristics 150 Reverse Voltage, VR [v] 140 130 Reverse Current, IR [nA] Ta= 25C 300 Ta= 25C 250 200 150 100 50 0 10 20 30 50 Reverse Voltage, VR [v] 70 100 120 R 110 1 2 3 5 10 20 30 Reverse Current, IR [uA] 50 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100A Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V Forward Voltage, VF [mV] Forward Voltage, VF [mV] F 485 Ta= 25C 450 400 350 300 250 225 1 2 3 F 725 Ta= 25C 700 650 600 550 500 450 0.1 F 5 10 20 30 Forward Current, IF [uA] 50 100 0.2 0.3 0.5 1 2 3 Forward Current, IF [mA] 5 10 Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100A Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA 1.5 Forward Voltage, VF [V] 1.4 1.2 1 0.8 Total Capacitance, C T [pF] Ta= 25C 1.3 Ta= 25C 1.2 1.1 F 0.6 10 1 20 30 50 100 200 300 Forward Current, IF [mA] 500 0 2 4 6 8 10 Reverse Voltage [V] 12 14 15 Figure 5. Forward Voltage vs Forward Current VF - 10 - 800mA Figure 6. Total Capacitance (c)2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A BAS16HT1G Typical Characteristics Reverse Recovery Time, trr [ns] (Continued) 4 Ta= 25C C u rre n t [m A ] 400 500 400 IR -F 3.5 3 OR WA R 300 D CU R 300 200 RE NT 2.5 2 IF (A V 200 100 1.5 D 100 0 Y Io - A V E R A ST VERA G E AT GE R R E C E ECTIF T IF -m IE IE D C D A C URR U R E NTR E - mA NT ) -A ST EA D mA 1 10 0 20 30 40 Reverse Current [mA] 50 60 0 0 50 50 100 100 150 150 oo A Ambient Temperature, TA [ C] IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10mA vs 60mA Figure 8. Average Rectified Current (IF(AV)) vs Ambient Temperature (TA) 500 Power Dissipation, PD [mW] 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 SOD-323 Pkg 0 0 50 100 o 150 200 Average Temperature, Io [ C] Figure 9. Power Derating Curve (c)2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A BAS16HT1G Package Dimension SOD-323 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I11 |
Price & Availability of BAS16HT1G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |